ZnO/GaN heteroepitaxy

K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho, T. Yao, S. K. Hong

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

This paper presents the recent achievements of ZnO/GaN heteroepitaxy. The general controlling method and mechanism for the polarity of heteroepitaxial ZnO and GaN films by interface engineering via Plasma-assisted Molecular beam epitaxy(P-MBE) are introduced in a viewpoint of principle for polarity control. We propose the principle of crystal polarity: Crystal polarity can succeed at the heterointerface when no interface layer is formed, while an interface layer with inversion symmetry is formed, the crystal polarity is inverted at the heterointerfae. The effects of polarity on the interface, surface and bulk structure, and the structural and optical properties of ZnO/GaN epitaxy are also included. The polarity of GaN on ZnO is successfully controlled based on the proposed principle for control of crystal polarity. Additionally, the electronic characteristics such as electron concentration, band-line-up, and C-V characteristics of ZnO/GaN heterointerface are dicussed.

本文言語English
論文番号B10.3
ページ(範囲)491-502
ページ数12
ジャーナルMaterials Research Society Symposium Proceedings
829
出版ステータスPublished - 2005 6 20
イベントProgress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications - Boston, MA, United States
継続期間: 2004 11 292004 12 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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