ZnO epilayers on GaN templates: Polarity control and valence-band offset

Soon Ku Hong, Takashi Kanada, Hisao Makino, Hang Ju Ko, Yefan Chen, Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, Shigeru Sato, Daisuke Imai, Kiyoaki Araki, Makoto Shinohara

研究成果: Conference article査読

35 被引用数 (Scopus)

抄録

Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.

本文言語English
ページ(範囲)1429-1433
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
4
DOI
出版ステータスPublished - 2001 7
イベント19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
継続期間: 2000 10 152000 10 18

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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