Zn- and O-polar ZnO epilayers were grown selectively by PMBE on Ga-polar GaN templates. The valence-band offset at the (0001) ZnO/GaN heterointerface was determined. Zn preexposure prior to ZnO growth led to the growth of Zn-polar ZnO epilayers, while O-plasma preexposure prior to ZnO growth resulted in the growth of O-polar epilayers. An interface layer was formed between the ZnO and GaN epilayers in the O-plasma preexposed sample and it was identified as single-crystalline, monoclinic Ga2O3.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2001 7|
|イベント||19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States|
継続期間: 2000 10 15 → 2000 10 18
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering