Zinc-blende-type cubic GaN single crystals prepared in a potassium flux

Hisanori Yamane, Takashi Kajiwara, Takashi Sekiguchi, Masahiko Shimada

    研究成果: Article査読

    24 被引用数 (Scopus)

    抄録

    Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.

    本文言語English
    ジャーナルUnknown Journal
    39
    2 B
    DOI
    出版ステータスPublished - 2000 1 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

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