@article{7710cb9dd1a441908d5ab64e6d98b16e,
title = "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films",
abstract = "To investigate the doping and surface electron accumulation layer properties of tin dioxide (SnO2), the Fermi level and surface band bending of unintentionally-, antimony (Sb)-, and indium (In)-doped SnO 2 (101) films were investigated by aluminum and hard x-ray photoelectron spectroscopy, which probe surface and bulk regions, respectively. The Fermi level was above the conduction band minimum (CBM) for unintentionally-doped films and for highly Sb-doped films, which showed the conduction band feature, and deep in the band gap for In-doped films. The band bending and surface Fermi level indicated a surface Fermi level pinning in the CBM.",
author = "T. Nagata and O. Bierwagen and White, {M. E.} and Tsai, {M. Y.} and Y. Yamashita and H. Yoshikawa and N. Ohashi and K. Kobayashi and T. Chikyow and Speck, {J. S.}",
note = "Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed under the approval of the NIMS Beamline Station (Proposal No. 2009B 4601 and 2010A 4604). This work was supported in part by the National Science Foundation (NSF) MRSEC and MWN Programs under Award Nos. DMR05-20415 and DMR09-09203. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF-funded NNIN network. O.B. was supported by a grant from the AFOSR (Award No. FA9550-08-1-0461). We also gratefully acknowledge T. Mates for valuable SIMS and XPS discussion and assistance, and C. G. Van de Walle, J. Varley, and P. Rinke for useful discussions.",
year = "2011",
month = jun,
day = "6",
doi = "10.1063/1.3596449",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",
}