XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films

T. Nagata, O. Bierwagen, M. E. White, M. Y. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, J. S. Speck

研究成果: Article査読

32 被引用数 (Scopus)

抄録

To investigate the doping and surface electron accumulation layer properties of tin dioxide (SnO2), the Fermi level and surface band bending of unintentionally-, antimony (Sb)-, and indium (In)-doped SnO 2 (101) films were investigated by aluminum and hard x-ray photoelectron spectroscopy, which probe surface and bulk regions, respectively. The Fermi level was above the conduction band minimum (CBM) for unintentionally-doped films and for highly Sb-doped films, which showed the conduction band feature, and deep in the band gap for In-doped films. The band bending and surface Fermi level indicated a surface Fermi level pinning in the CBM.

本文言語English
論文番号232107
ジャーナルApplied Physics Letters
98
23
DOI
出版ステータスPublished - 2011 6 6
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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