XPS and STM studies on initial oxidation of Si(110)-16×2

Maki Suemitsu, Hideaki Toģashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
ページ19-25
ページ数7
出版ステータスPublished - 2007
イベントCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2007 4月 92007 4月 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
996
ISSN(印刷版)0272-9172

Other

OtherCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period07/4/907/4/13

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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