X-ray production by channeled ions

M. Ohura, K. Ozawa, J. H. Chang, Y. Yamamoto, S. Morita, K. Ishii

研究成果: Article査読

抄録

RBS and X-ray spectra have been measured for random and aligned (parallel to 〈100〉 axis) orientation of Si crystals and SOS (silicon on sapphire) crystals of 4000 Å thick Si. The projectile energy has been changed over the ranges 0.5-2.0 MeV for protons and 0.25-0.6 MeV/amu for α particles. The ratio of X-ray counts of the aligned case to those of the random case is shown as a function of projectile energy separately for Si K X-rays and continuum bremsstrahlung. The impact-parameter dependence of ion-atom collisions for producing these X-rays is discussed.

本文言語English
ページ(範囲)137-140
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, A
262
1
DOI
出版ステータスPublished - 1987 12 1

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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