Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A

Akihiro Ohtake, Jun Nakamura, Masami Terauchi, Futami Sato, Michiyoshi Tanaka, Kozo Kimura, Takafumi Yao

    研究成果: Article査読

    10 被引用数 (Scopus)

    抄録

    We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the(111)A-orientedsubstrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate.

    本文言語English
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    63
    19
    DOI
    出版ステータスPublished - 2001 5月 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学

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