Wurtzite-derived ternary I-III-O2 semiconductors

Takahisa Omata, Hiraku Nagatani, Issei Suzuki, Masao Kita

研究成果: Review article査読

19 被引用数 (Scopus)

抄録

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I-III-O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I-III-O2 semiconductors.

本文言語English
論文番号024902
ジャーナルScience and Technology of Advanced Materials
16
2
DOI
出版ステータスPublished - 2015 4 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)

フィンガープリント

「Wurtzite-derived ternary I-III-O<sub>2</sub> semiconductors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル