Writing properties of clad lines in a toggle MRAM

S. Miura; K. Shimura; N. Ohshima; R. Nebashi; T. Suzuki; H. Hada; S. Tahara; H. Aikawa; T. Ueda; T. Kajiyama; Y. Asao

doi:10.1016/j.jmmm.2006.10.974

Writing properties of clad lines in a toggle MRAM

S. Miura, K. Shimura, N. Ohshima, R. Nebashi, T. Suzuki, H. Hada, S. Tahara, H. Aikawa, T. Ueda, T. Kajiyama, Y. Asao

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

本文言語	English
ページ（範囲）	e933-e935
ジャーナル	Journal of Magnetism and Magnetic Materials
巻	310
号	2 SUPPL. PART 3
DOI	https://doi.org/10.1016/j.jmmm.2006.10.974
出版ステータス	Published - 2007 3月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1016/j.jmmm.2006.10.974

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title = "Writing properties of clad lines in a toggle MRAM",

abstract = "We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.",

keywords = "Clad line, MRAM, Toggle memory",

author = "S. Miura and K. Shimura and N. Ohshima and R. Nebashi and T. Suzuki and H. Hada and S. Tahara and H. Aikawa and T. Ueda and T. Kajiyama and Y. Asao",

year = "2007",

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doi = "10.1016/j.jmmm.2006.10.974",

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TY - JOUR

T1 - Writing properties of clad lines in a toggle MRAM

AU - Miura, S.

AU - Shimura, K.

AU - Ohshima, N.

AU - Nebashi, R.

AU - Suzuki, T.

AU - Hada, H.

AU - Tahara, S.

AU - Aikawa, H.

AU - Ueda, T.

AU - Kajiyama, T.

AU - Asao, Y.

PY - 2007/3/1

Y1 - 2007/3/1

N2 - We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

AB - We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

KW - Clad line

KW - MRAM

KW - Toggle memory

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UR - http://www.scopus.com/inward/citedby.url?scp=33847646199&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.974

DO - 10.1016/j.jmmm.2006.10.974

M3 - Article

AN - SCOPUS:33847646199

VL - 310

SP - e933-e935

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2 SUPPL. PART 3

ER -

Writing properties of clad lines in a toggle MRAM

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