We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.
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