Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

T. Matsukawa, Y. X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

Work function (φ m) of metal transistor gates was controlled by using Al-Ni and Ni-Ta alloys made through an interdiffusion process, in which stacks of different metals were annealed. In addition to conventional capacitance-voltage measurements for φ m evaluation, φ m uniformity was also measured microscopically. The average φ m of the Al-Ni alloy was successfully changed compared to that of pure Al by interdiffusion at 500 °C. The φ m nonuniformity of Al-Ni, however, was problematic. Though Ni-Ta alloys required interdiffusion at a higher temperature of 700 °C, the Ni-Ta alloys had better φ m uniformity. Thus, the Ni-Ta alloy is a more suitable candidate for use in metal gates of high-integrity transistors.

本文言語English
ページ(範囲)284-287
ページ数4
ジャーナルMicroelectronic Engineering
80
SUPPL.
DOI
出版ステータスPublished - 2005 6 17
外部発表はい
イベント14th Biennial Conference on Insulating Films on Semiconductors -
継続期間: 2005 6 222005 6 24

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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