Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

T. Matsukawa, Y. X. Liu, M. Masahara, K. Endo, K. Ishii, H. Yamauchi, E. Sugimata, H. Takashima, S. Kanemaru, E. Suzuki

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φm) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φm of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φm uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φm by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.

本文言語English
ホスト出版物のタイトルProceedings of ESSDERC 2005
ホスト出版物のサブタイトル35th European Solid-State Device Research Conference
ページ109-112
ページ数4
DOI
出版ステータスPublished - 2005 12月 1
外部発表はい
イベントESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
継続期間: 2005 9月 122005 9月 16

出版物シリーズ

名前Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
国/地域France
CityGrenoble
Period05/9/1205/9/16

ASJC Scopus subject areas

  • 工学(全般)

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