Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 1 0 0 cubic and [-1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.

本文言語English
ページ(範囲)2685-2689
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
42
10
DOI
出版ステータスPublished - 2010 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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