Wide dynamic range CMOS image sensors for high quality digital camera, security, automotive and medical applications

Nana Akahane, Shigetoshi Sugawa, Satoru Adachi, Koichi Mizobuchi

研究成果: Conference contribution

14 被引用数 (Scopus)

抄録

Wide dynamic range (DR) CMOS image sensors featuring a lateral overflow integration capacitor in a pixel, which locates next to the floating diffusion and integrates the overflow photoelectrons from the fully depleted photodiode in the same integration term, have been developed. The DR has been extended to 100 dB in a single exposure by adding the minimum number of the circuit elements to the four transistors type CMOS image sensor, with a high sensitivity, a high S/N ratio and a superior moving image quality. The hyper DR extension over 200 dB, with the equivalent light intensity ranging from 10-2 lx to 108 lx has also been achieved by the combination of the voltage readout operations of the abovementioned lateral overflow integration in multiple exposures and the current readout operation of amplifying the photodiode current. The S/N ratio dominated by all the noise components including the photon shot noise exceeds 40 dB in any switching point from low light to bright light.

本文言語English
ホスト出版物のタイトル2006 5th IEEE Conference on Sensors
ページ396-399
ページ数4
DOI
出版ステータスPublished - 2006
イベント2006 5th IEEE Conference on Sensors - Daegu, Korea, Republic of
継続期間: 2006 10 222006 10 25

出版物シリーズ

名前Proceedings of IEEE Sensors

Other

Other2006 5th IEEE Conference on Sensors
国/地域Korea, Republic of
CityDaegu
Period06/10/2206/10/25

ASJC Scopus subject areas

  • 電子工学および電気工学

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