Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

We propose a novel approach to control the effective workfunction (WF) by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage (Vfb) from 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at metal/HfSiON interfaces. Further tunability in Vfb has been examined by employing C-incorporation in the RuMo alloy, thus reducing the crystal grain size and facilitating the control of V fb for a HfSiON (2nm)/SiO2(0.7nm)/Si capacitor. These results demonstrate that the crystal structure control in metal gates is essential for realizing the MIS-FET devices with a short gate length in the 32-22 nm node and beyond.

本文言語English
論文番号4418942
ページ(範囲)345-348
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版ステータスPublished - 2007
イベント2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
継続期間: 2007 12 102007 12 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント 「Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル