What is the most important growth parameter on crystal quality of the silicon layer by LPE method?

Toru Ujihara, Kazuo Obara, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Toetsu Shishido, Kazuo Nakajima

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We investigated the effect of growth parameters, growth temperature, growth rate and solvent, on crystal quality of silicon thin layers grown by LPE method. Electrical and structural properties were examined by means of minority-carrier lifetime measurement and micro-Raman scattering spectroscopy. It was made clear that crystal quality strongly depends on the growth temperature mainly due to equilibrium impurity solubility in the silicon layers. In addition, it is important to choose an appropriate solvent whose solubility in crystalline silicon is low and effective capture cross section is small. In actual, we successfully grew the silicon layer of which the lifetime was higher than that of monocrystalline silicon crystal as a substrate.

本文言語English
ホスト出版物のタイトルProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
編集者K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
ページ1241-1244
ページ数4
出版ステータスPublished - 2003 12 1
イベントProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
継続期間: 2003 5 112003 5 18

出版物シリーズ

名前Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
B

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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