Wet etching of amorphous TiO2 thin films using H 3PO4-H2O2 aqueous solution

Sohei Okazaki, Takuya Ohhashi, Shoichiro Nakao, Yasushi Hirose, Taro Hitosugi, Tetsuya Hasegawa

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    We report on the wet etching of amorphous undoped and Nb-doped TiO2 thin films using H3PO4-H2O2 etching solution. The etching rate (R) showed a maximum at a H3PO4 concentration of approximately 50 wt% at 80 °C, suggesting that H2PO4 and/or H3O+ is responsible for the etching reaction. The addition of H2O2 to H3PO4 solution significantly enhanced R, and an optimized solution exhibited an R of 13 nm/min at 80 °C, which is one order of magnitude higher than that using H2SO4. These results demonstrate that H3PO4-H2O2 aqueous solution is an effective etchant for TiO2-based amorphous thin films.

    本文言語English
    論文番号098002
    ジャーナルJapanese journal of applied physics
    52
    9
    DOI
    出版ステータスPublished - 2013 9

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    フィンガープリント 「Wet etching of amorphous TiO<sub>2</sub> thin films using H <sub>3</sub>PO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub> aqueous solution」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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