Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation

Masaki Kurokiba, Takayoshi Ogawa

研究成果: Article査読

56 被引用数 (Scopus)

抄録

We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.

本文言語English
ページ(範囲)1052-1067
ページ数16
ジャーナルJournal of Mathematical Analysis and Applications
342
2
DOI
出版ステータスPublished - 2008 6 15

ASJC Scopus subject areas

  • 分析
  • 応用数学

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