Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process

Y. Xuan, D. Hojo, T. Yasuda

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A well-behaved metal-oxide-semiconductor (MOS) capacitor characteristics of hafnium silicate (Hf) films prepared by vapor liquid hybrid deposition (VALID) were described. Hf silicate films were deposited at room temperature using TEOS as a silicon precursor. They exhibit well-behaved MOS capacitor characteristics after appropriate annealing treatments. Experiments were carried out using p type Si(001) wafers with resistivity of 1-5 ω cm. The leakage current density was four orders of magnitude lower than silica reference data in the equivalent-oxide-thickness range of >2.5 nm.

本文言語English
ページ(範囲)5097-5099
ページ数3
ジャーナルApplied Physics Letters
84
25
DOI
出版ステータスPublished - 2004 6 21

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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