A well-behaved metal-oxide-semiconductor (MOS) capacitor characteristics of hafnium silicate (Hf) films prepared by vapor liquid hybrid deposition (VALID) were described. Hf silicate films were deposited at room temperature using TEOS as a silicon precursor. They exhibit well-behaved MOS capacitor characteristics after appropriate annealing treatments. Experiments were carried out using p type Si(001) wafers with resistivity of 1-5 ω cm. The leakage current density was four orders of magnitude lower than silica reference data in the equivalent-oxide-thickness range of >2.5 nm.
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