Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films

Shoichi Takasuna, Junichi Shiogai, Shunichiro Matsuzaka, Makoto Kohda, Yutaka Oyama, Junsaku Nitta

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Magnetoconductance (MC) at low temperature was measured to investigate spin-related transport affected by spin-orbit interaction (SOI) in III-VI compound n-type GaSe thin films. Results reveal that MC shows weak antilocalization (WAL). Its temperature and gate voltage dependences reveal that the dominant spin relaxation is governed by the D'yakonov-Perel' mechanism associated with the Rashba SOI. The estimated Rashba SOI strength in GaSe is much stronger than that of III-V compound GaAs quantum wells, although the energy gap and spin split-off band in GaSe closely resemble those in GaAs. The angle dependence of WAL amplitude in the in-plane magnetic field direction is almost isotropic. This isotropy indicates that the strength of the Dresselhaus SOI is negligible compared with the Rashba SOI strength. The SOI effect in n-GaSe thin films differs greatly from those of III-V compound semiconductors and transition-metal dichalcogenides.

本文言語English
論文番号161303
ジャーナルPhysical Review B
96
16
DOI
出版ステータスPublished - 2017 10 30

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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