Wafer-to-wafer transfer process of barium strontium titanate for frequency tuning applications using laser pre-irradiation

Tetuo Samoto, Hideki Hirano, Toshihiro Somekawa, Kousuke Hikichi, Masayuki Fujita, Masayoshi Esashi, Shuji Tanaka

研究成果: Article査読

3 被引用数 (Scopus)

抄録

This paper describes laser-assisted film transfer technology for barium strontium titanate (BST) deposited on a sapphire substrate. BST is a promising ferroelectric material for varactors, which are required for frequency-tunable RF applications. However, the deposition temperature of BST (600 ∼ 700 °C) is too high for surface acoustic wave (SAW) substrates. In this study, BST grown on a sapphire substrate at 650 °C was transferred at low temperature (140 °C) to a borosilicate glass substrate as well as a LiTaO3 substrate. The transferred BST films were characterized as tunable capacitors. A key process in the BST film transfer technology is the laser pre-irradiation of a buffer Pt layer beneath BST from the backside of the sapphire substrate to weaken the BST-to-Pt adhesion. The mechanism of delamination at the BST/Pt interface is discussed using a simple 1D heat transfer model.

本文言語English
論文番号035015
ジャーナルJournal of Micromechanics and Microengineering
25
3
DOI
出版ステータスPublished - 2015 3 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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