WA-B8 Double-Heterostructure Ga0.47In0.53 As MESFET's

WA-B8 Double-Heterostructure Ga_0.47In_0.53 As MESFET's

H. Ohno, J. Barnard, C. E.C. Wood, L. F. Eastman

研究成果: Article › 査読

本文言語	English
ページ（範囲）	2198
ページ数	1
ジャーナル	IEEE Transactions on Electron Devices
巻	27
号	11
DOI	https://doi.org/10.1109/T-ED.1980.20235
出版ステータス	Published - 1980 11月
外部発表	はい

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