Volume swelling of amorphous SiC during ion-beam irradiation

Manabu Ishimaru, In Tae Bae, Akihiko Hirata, Yoshihiko Hirotsu, James A. Valdez, Kurt E. Sickafus

研究成果: Article査読

40 被引用数 (Scopus)

抄録

Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

本文言語English
論文番号024116
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
2
DOI
出版ステータスPublished - 2005 7 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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