Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe

研究成果: Conference contribution

11 被引用数 (Scopus)

抄録

We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

本文言語English
ホスト出版物のタイトル2016 IEEE International Electron Devices Meeting, IEDM 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ27.6.1-27.6.4
ISBN(電子版)9781509039012
DOI
出版ステータスPublished - 2017 1 31
外部発表はい
イベント62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
継続期間: 2016 12 32016 12 7

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period16/12/316/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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