Voltage control of spin-orbit torque in Pd/Co/Pd/HfO x

Takamasa Hirai; Yuki Hibino; Kento Hasegawa; Makoto Kohda; Tomohiro Koyama; Daichi Chiba

doi:10.35848/1882-0786/abcd71

Voltage control of spin-orbit torque in Pd/Co/Pd/HfO _x

Takamasa Hirai, Yuki Hibino, Kento Hasegawa, Makoto Kohda, Tomohiro Koyama, Daichi Chiba

工学研究科・知能デバイス材料学専攻

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

Voltage control of current-induced spin-orbit torque (SOT) in an in-plane-magnetized Pd/Co/Pd system with a low-temperature-deposited HfO x and a gate electrode on top is studied. An application of the gate electric field to the HfO x layer is to induce a non-volatile electrochemical effect from the Pd/HfO x interface. By means of low-frequency harmonic Hall measurements, the voltage modulation of both damping-like and field-like SOT is obtained. The sign of the voltage-induced SOT modification is found to be reversed by changing the top Pd thickness. Our finding is expected to facilitate the efficient active manipulation of SOT.

本文言語	English
論文番号	123005
ジャーナル	Applied Physics Express
巻	13
号	12
DOI	https://doi.org/10.35848/1882-0786/abcd71
出版ステータス	Published - 2020 12月 1

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.35848/1882-0786/abcd71

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引用スタイル

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title = "Voltage control of spin-orbit torque in Pd/Co/Pd/HfO x",

abstract = "Voltage control of current-induced spin-orbit torque (SOT) in an in-plane-magnetized Pd/Co/Pd system with a low-temperature-deposited HfO x and a gate electrode on top is studied. An application of the gate electric field to the HfO x layer is to induce a non-volatile electrochemical effect from the Pd/HfO x interface. By means of low-frequency harmonic Hall measurements, the voltage modulation of both damping-like and field-like SOT is obtained. The sign of the voltage-induced SOT modification is found to be reversed by changing the top Pd thickness. Our finding is expected to facilitate the efficient active manipulation of SOT. ",

author = "Takamasa Hirai and Yuki Hibino and Kento Hasegawa and Makoto Kohda and Tomohiro Koyama and Daichi Chiba",

note = "Funding Information: The authors thank N. Akao and Y. Ohira for useful discussions and technical supports. This work was supported by the JSPS KAKENHI (Grant Nos. JP18J10734, JP20J00365, JP25220604, JP19H00860, and JP16J03105), and Spintronics Research Network of Japan. Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.",

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AU - Hirai, Takamasa

AU - Hibino, Yuki

AU - Hasegawa, Kento

AU - Kohda, Makoto

AU - Koyama, Tomohiro

AU - Chiba, Daichi

N1 - Funding Information: The authors thank N. Akao and Y. Ohira for useful discussions and technical supports. This work was supported by the JSPS KAKENHI (Grant Nos. JP18J10734, JP20J00365, JP25220604, JP19H00860, and JP16J03105), and Spintronics Research Network of Japan. Publisher Copyright: © 2020 The Japan Society of Applied Physics.

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Voltage control of current-induced spin-orbit torque (SOT) in an in-plane-magnetized Pd/Co/Pd system with a low-temperature-deposited HfO x and a gate electrode on top is studied. An application of the gate electric field to the HfO x layer is to induce a non-volatile electrochemical effect from the Pd/HfO x interface. By means of low-frequency harmonic Hall measurements, the voltage modulation of both damping-like and field-like SOT is obtained. The sign of the voltage-induced SOT modification is found to be reversed by changing the top Pd thickness. Our finding is expected to facilitate the efficient active manipulation of SOT.

AB - Voltage control of current-induced spin-orbit torque (SOT) in an in-plane-magnetized Pd/Co/Pd system with a low-temperature-deposited HfO x and a gate electrode on top is studied. An application of the gate electric field to the HfO x layer is to induce a non-volatile electrochemical effect from the Pd/HfO x interface. By means of low-frequency harmonic Hall measurements, the voltage modulation of both damping-like and field-like SOT is obtained. The sign of the voltage-induced SOT modification is found to be reversed by changing the top Pd thickness. Our finding is expected to facilitate the efficient active manipulation of SOT.

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