By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.
|出版ステータス||Published - 2006 12 1|
|イベント||7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States|
継続期間: 2006 11 5 → 2006 11 8
|Other||7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006|
|City||San Mateo, CA|
|Period||06/11/5 → 06/11/8|
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