Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory

Koichiro Honda, Yasuo Cho

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

本文言語English
ページ4-11
ページ数8
出版ステータスPublished - 2006 12 1
イベント7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States
継続期間: 2006 11 52006 11 8

Other

Other7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
国/地域United States
CitySan Mateo, CA
Period06/11/506/11/8

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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