Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal- SiO2 - Si3 N4 - SiO2 -semiconductor flash memory

Koichiro Honda, Yasuo Cho

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We have used scanning nonlinear dielectric microscopy to clarify the position of electrons and holes in the gate SiO2 - Si3 N4 - SiO2 (ONO) film of a metal-ONO-semiconductor flash memory. The electrons were detected in the Si3 N4 part of the ONO film, while the holes were found in the bottom SiO2 film as well as in the Si3 N4 film. This suggests that the injected electrons and holes did not always recombine with each other.

本文言語English
論文番号013501
ページ(範囲)013501-1-013501-3
ジャーナルApplied Physics Letters
86
1
DOI
出版ステータスPublished - 2005 1

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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