Vibrational-Electrical Properties Relationship in Donor-Doped TiO2 by Raman Spectroscopy

P. Mazzolini, V. Russo, C. S. Casari, T. Hitosugi, S. Nakao, T. Hasegawa, A. Li Bassi

    研究成果: Article査読

    31 被引用数 (Scopus)

    抄録

    Transparent conducting TiO2, obtained by Nb or Ta doping of the anatase structure, is gaining increasing attention for the development of transparent electrodes. Usually, regardless of the deposition technique, a crystallization process in a reducing atmosphere is necessary to achieve large mobility; in addition, electrical and optical properties are also strongly sensitive to the oxygen deposition pressure. These facts reveal that the defect chemistry of donor-doped TiO2 is not trivial and involves a strict interplay among extrinsic dopant atoms, oxygen vacancies, and "electron killer" defects such as Ti vacancies and O interstitials. We here present a Raman characterization of donor-doped TiO2 films synthesized under several deposition and postannealing conditions, employing different doping levels and dopant elements (i.e., Ta and Nb). Correlations between structure, crystallinity, shift and width of Raman peaks, and electrical properties are shown and discussed. In particular, a clear relationship between the shift of the Eg(1) anatase Raman mode and the charge carrier density is found, while the B1g(1) mode connected to Ti-Ti vibrations is significantly affected by the extrinsic doping level. In this complex framework, Raman spectroscopy can provide an invaluable contribution toward understanding the material structure and its influence on the functional properties.

    本文言語English
    ページ(範囲)18878-18886
    ページ数9
    ジャーナルJournal of Physical Chemistry C
    120
    33
    DOI
    出版ステータスPublished - 2016 8月 25

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • エネルギー(全般)
    • 物理化学および理論化学
    • 表面、皮膜および薄膜

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