VIB-1 New Hot-Carrier-Induced Degradation Phenomena in Half-Micrometer MOS Transistors

Akihiro Nitayama, Naoko Takenouchi, Takeshi Hamamoto, Yukihito Oowaki

研究成果: Article査読

1 被引用数 (Scopus)
本文言語English
ページ(範囲)2384
ページ数1
ジャーナルIEEE Transactions on Electron Devices
34
11
DOI
出版ステータスPublished - 1987 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用スタイル