Very simple method of flattening Si(111) surface at an atomic level using oxygen-free water

Hirokazu Fukidome, Michio Matsumura

研究成果: Article査読

46 被引用数 (Scopus)

抄録

Si(111) surfaces were found to be very easily flattened at an atomic level by immersing the wafers in water, from which dissolved oxygen was removed by the addition of sulfite ion as chemical deoxygenator, at room temperature. After the treatment with this oxygen-free water, the Si(111) surfaces slightly misoriented in the 〈112̄〉 direction showed straight and parallel steps and wide terraces under atomic force microscopy observation. When wafers slightly misoriented in the opposite direction were treated in the same manner, the steps showed a characteristic zigzag pattern with an angle of 60°. The steps that appeared on both surfaces were attributable to monohydride steps generated on the edge of flat terraces.

本文言語English
ページ(範囲)L1085-L1086
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
10 A
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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