Vertical hot-electron graphene-base transistors as resonant plasmonic terahertz detectors

Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji, Michael S. Shur

研究成果: Conference contribution

抄録

We evaluate the operation of vertical hot-electron graphene-base transistors (HET-GBTs) as detectors of terahertz (THz) radiation using the developed device model. The model accounts for the carrier statistics, tunneling injection from the emitter, electron propagation across the barrier layer with partial capture into the graphene-layer (GL) base, and the self-consistent plasma oscillations of the electric potential and the hole density in the GL-base. The calculated responsivity of the HET-GBT THz detectors as a function of the signal frequency exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The HET-GBTs can compete with and even surpass other plasmonic THz detectors.

本文言語English
ホスト出版物のタイトル2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479974733
DOI
出版ステータスPublished - 2015 12月 17
イベントIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
継続期間: 2015 11月 22015 11月 4

出版物シリーズ

名前2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Other

OtherIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
国/地域Israel
CityTel-Aviv
Period15/11/215/11/4

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ ネットワークおよび通信
  • 放射線

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