Vertex Channel Field Effect Transistor (VC-FET) technology featuring high performance and highly manufacturable trench capacitor DRAM

M. Kido, M. Kito, R. Katsumata, M. Kondo, S. Ito, K. Matsuo, K. Miyano, I. Mizushima, M. Sato, H. Tanaka, H. Yasutake, Y. Nagata, T. Hoshino, N. Aoki, H. Aochi, Akihiro Nitayama

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or much smaller propagation delay (Tpd) of fan-out 3 than planar devices. Furthermore, 1.6 times of on-current as a planar array transistor is achieved by the combination of VCAT and P+poly gate without degradation of retention characteristics.

本文言語English
ホスト出版物のタイトル2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
ページ36-37
ページ数2
出版ステータスPublished - 2006 12 1
イベント2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
継続期間: 2006 6 132006 6 15

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
国/地域United States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • 電子工学および電気工学

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