Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

Engineering

• Characteristics 8%
• Dopant Concentration 16%
• Edge Region 8%
• Electric Field 8%
• Field Effect Transistors 100%
• Integration 8%
• Networks (Circuits) 8%
• Process Condition 8%
• Source Region 16%
• Substrates 8%
• Tunneling 8%
• Tunnels 50%

Earth and Planetary Sciences

• Circuit 8%
• Difference 8%
• Edge 16%
• Electric Field 8%
• Field Effect Transistor 16%
• Parameter 8%
• Retarding 8%
• Substrate 8%
• Threshold Voltage 8%
• Variation 41%
• Width 8%

Material Science

• Devices 8%