Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

S. Migita, T. Matsukawa, T. Mori, K. Fukuda, Y. Morita, W. Mizubayashi, K. Endo, Y. Liu, S. O'Uchi, M. Masahara, H. Ota

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Tunnel-FETs (TFETs) and MOSFETs are fabricated on a single SOI substrate using the same device parameters and process conditions, and the variation behavior of TFETs is studied by highlighting the difference with MOSFETs. It is found that the variation behavior characteristic to TFET is mainly caused by two factors. One is the dopant concentration at source region. It seems to affect to the uniformity of tunneling current along the channel width. A heavier source concentration is necessary to suppress the variation. Another factor is the channel edge configuration. Electric fields are easily concentrated at channel edge regions, and it lowers the threshold voltage of TFETs locally. It brings about an asymmetric variation behavior. Suppression of these factors is indispensable for the integration of TFET circuits.

本文言語English
ホスト出版物のタイトルEuropean Solid-State Device Research Conference
編集者Roberto Bez, Gaudenzio Meneghesso, Paolo Pavan
出版社IEEE Computer Society
ページ278-281
ページ数4
ISBN(電子版)9781479943784
DOI
出版ステータスPublished - 2014 11月 5
外部発表はい
イベント44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy
継続期間: 2014 9月 222014 9月 26

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

Other

Other44th European Solid-State Device Research Conference, ESSDERC 2014
国/地域Italy
CityVenezia Lido
Period14/9/2214/9/26

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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