Variability origins of parasitic resistance in finFETs with silicided source/drain

Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'Uchi, Kunihiro Sakamoto, Meishoku Masahara

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.

本文言語English
論文番号6151016
ページ(範囲)474-476
ページ数3
ジャーナルIEEE Electron Device Letters
33
4
DOI
出版ステータスPublished - 2012 4
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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