Origins of parasitic resistance R para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R ext reflecting fin thickness T fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R para on average, it causes additional fluctuation of R para. Analyzing the correlation of the R para fluctuation with the fluctuation in T fin and the lateral growth of NiSi, the dominant origin of the R para fluctuation is specified to be the NiSi/n +-Si contact resistance.
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