Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET

Kazuhiko Endo; Shin Ichi O'uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Hiromi Yamauchi; Meishoku Masahara

doi:10.1109/VTSA.2010.5488919

Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

研究成果: Conference contribution

抄録

Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the V_th variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the V_th-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.

本文言語	English
ホスト出版物のタイトル	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
ページ	124-125
ページ数	2
DOI	https://doi.org/10.1109/VTSA.2010.5488919
出版ステータス	Published - 2010 10月 20
外部発表	はい
イベント	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China 継続期間: 2010 4月 26 → 2010 4月 28

出版物シリーズ

名前	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Other

Other	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
国/地域	Taiwan, Province of China
City	Hsin Chu
Period	10/4/26 → 10/4/28

ASJC Scopus subject areas

コンピュータネットワークおよび通信
ハードウェアとアーキテクチャ

文献へのアクセス

10.1109/VTSA.2010.5488919

他のファイルとリンク

フィンガープリント

「Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Yamauchi, H., & Masahara, M. (2010). Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 124-125). [5488919] (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488919

Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET. / Endo, Kazuhiko; O'uchi, Shin Ichi; Ishikawa, Yuki その他.

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 124-125 5488919 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

研究成果: Conference contribution

Endo, K, O'uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Sakamoto, K, Tsukada, J, Yamauchi, H & Masahara, M 2010, Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET. in Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488919, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, pp. 124-125, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, Taiwan, Province of China, 10/4/26. https://doi.org/10.1109/VTSA.2010.5488919

Endo K, O'uchi SI, Ishikawa Y, Liu Y, Matsukawa T, Sakamoto K その他. Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 124-125. 5488919. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488919

Endo, Kazuhiko ; O'uchi, Shin Ichi ; Ishikawa, Yuki その他. / Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. pp. 124-125 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

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abstract = "Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the Vth variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.",

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AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

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