Valley polarization in Si(100) at zero magnetic field

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama

研究成果: Article査読

116 被引用数 (Scopus)

抄録

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/Si(100)/SiO2 quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.

本文言語English
論文番号236801
ジャーナルPhysical review letters
96
23
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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