Valence controls and codoping for low-resistivity n-type diamond by ab initio molecular-dynamics simulation

Takeshi Nishimatsu, Hiroshi Katayama-Yoshida, Nozomi Orita

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Based upon ab initio molecular dynamics simulation, we have proposed a new valence control method, "a codoping method" (doping n- and p-type dopants at the same time), in order to fabricate a low-resistivity n-type diamond. We calculated the stable atomic configuration and electronic structure of the codoping of n- (nitrogen or phosphorus) and p-type (boron) dopants. We found that the codoping of nitrogen and boron is the best candidate to make the low-resistivity n-type diamond. We discuss the universality of codoping method for valence control in wide band gap semiconductors.

本文言語English
ページ(範囲)799-804
ページ数6
ジャーナルMaterials Science Forum
258-263
PART 2
DOI
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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