Based upon ab initio molecular dynamics simulation, we have proposed a new valence control method, "a codoping method" (doping n- and p-type dopants at the same time), in order to fabricate a low-resistivity n-type diamond. We calculated the stable atomic configuration and electronic structure of the codoping of n- (nitrogen or phosphorus) and p-type (boron) dopants. We found that the codoping of nitrogen and boron is the best candidate to make the low-resistivity n-type diamond. We discuss the universality of codoping method for valence control in wide band gap semiconductors.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 1997|
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