Valence band structure of the icosahedral Ag-In-Yb quasicrystal

H. R. Sharma, G. Simutis, V. R. Dhanak, P. J. Nugent, C. Cui, M. Shimoda, R. McGrath, A. P. Tsai, Y. Ishii

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The valence band structure of the icosahedral (i) Ag-In-Yb quasicrystal, which is isostructural to the binary i-Cd-Yb system, is investigated by ultraviolet photoemission spectroscopy (UPS). Experimental results are compared with electronic-structure calculations of a cubic approximant of the same phase. UPS spectra from the fivefold, threefold, and twofold i-Ag-In-Yb surfaces reveal that the valence band near to the Fermi level is dominated by Yb4f -derived states, in agreement with calculations. The spectra also exhibit peaks which are surface core level shifted, caused by changes in the electronic structure in surface layers. Calculations yield a pseudogap in the density of states due to a hybridization of the Yb5d band with the Ag5p and In5p bands. Both experimental and calculated band features are very similar to those of Cd-Yb. The modification of the band structure after surface treatment by sputtering and by oxidation is also studied. Additionally, the work function of i-Ag-In-Yb measured from the width of UPS spectrum is found to be almost unaffected by surface orientation, but increases after sputtering or oxidation.

本文言語English
論文番号104205
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
10
DOI
出版ステータスPublished - 2010 3月 18
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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