Valence band barrier at (Ga,Mn)As/GaAs interfaces

Y. Ohno, I. Arata, F. Matsukura, H. Ohno

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Transport properties of (Ga,Mn)As/GaAs/p-GaAs p-i-p diodes were studied to manifest the potential barrier in the valence band at (Ga,Mn)As/GaAs junctions. Spin injection into a nonmagnetic semiconductor was demonstrated by probing polarization of light emitted from (Ga,Mn)As/(In,Ga)As/n-GaAs p-i-n junctions. The temperature dependences of the current-voltage characteristics exhibited thermionic emission behaviors which gave the effective potential barrier height of 87-140 meV for holes injected from (GA,Mn)As to undoped GaAs.

本文言語English
ページ(範囲)521-524
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
13
2-4
DOI
出版ステータスPublished - 2002 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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