Transport properties of (Ga,Mn)As/GaAs/p-GaAs p-i-p diodes were studied to manifest the potential barrier in the valence band at (Ga,Mn)As/GaAs junctions. Spin injection into a nonmagnetic semiconductor was demonstrated by probing polarization of light emitted from (Ga,Mn)As/(In,Ga)As/n-GaAs p-i-n junctions. The temperature dependences of the current-voltage characteristics exhibited thermionic emission behaviors which gave the effective potential barrier height of 87-140 meV for holes injected from (GA,Mn)As to undoped GaAs.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2002 3|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics