Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

A. Uedono, R. Hasunuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada

研究成果: Conference contribution

抄録

Vacancy-type defects in MOSFET structures fabricated with high-k (HfSiON) gate dielectrics were studied by monogenetic positron beams An expansion of open volumes in HfSiON fabricated on Si substrates using atomic layer deposition technique was observed with increasing nitrogen concentration This fact was discussed in terms of a role of nitrogen in Hf-related oxide using results obtained by first-principles calculation and XPS. MOSFETs fabricated by F +-channel implantation technique were also characterized. The major defect species which causes the F& shift of MOSFETs was identified as vacancy-fluorine complexes (such as V3F2) locate in channel regions of Si substrates. The preset work suggests that positron annihilation can be used to detect microscopic defects in MOSFETs, and it is a useful tool for determining process parameters for MOSFET fabrications with high-k gate dielectrics.

本文言語English
ホスト出版物のタイトルECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
出版社Electrochemical Society Inc.
ページ81-90
ページ数10
4
ISBN(電子版)9781566775700
ISBN(印刷版)9781566775700
DOI
出版ステータスPublished - 2007
外部発表はい
イベント5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
継続期間: 2007 10月 82007 10月 10

出版物シリーズ

名前ECS Transactions
番号4
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
国/地域United States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • 工学(全般)

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