Vacancy formation during oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami, I. Yonenaga

研究成果: Article査読

3 被引用数 (Scopus)

抄録

To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and H2 followed by the quenching into water. Contrary to our expectation, the vacancy concentration was higher than that of the thermal equilibrium during the short duration of oxidation.

本文言語English
論文番号101904
ジャーナルApplied Physics Letters
93
10
DOI
出版ステータスPublished - 2008 9 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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