The ZnO films epitaxially grown on the ZnS-buffered Si were investigated to observe V defects. The structural and optical properties of the films were studied using x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), cathodoluminescence (CL), and optical reflectance (OR). It was observed that V-shaped defects with approximately 30 nm depth act as the optical paths. The results show that the near-bandedge emission at 3.22 and 3.32 eV at 30 K was transmitted throughout exciton dead layer without significant absorption.
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