V defects of ZnO thin films grown on Si as an ultraviolet optical path

Y. Z. Yoo, T. Sekiguchi, T. Chikyow, M. Kawasaki, T. Onuma, S. F. Chichibu, J. H. Song, H. Koinuma

研究成果: Article査読

29 被引用数 (Scopus)

抄録

The ZnO films epitaxially grown on the ZnS-buffered Si were investigated to observe V defects. The structural and optical properties of the films were studied using x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), cathodoluminescence (CL), and optical reflectance (OR). It was observed that V-shaped defects with approximately 30 nm depth act as the optical paths. The results show that the near-bandedge emission at 3.22 and 3.32 eV at 30 K was transmitted throughout exciton dead layer without significant absorption.

本文言語English
ページ(範囲)502-504
ページ数3
ジャーナルApplied Physics Letters
84
4
DOI
出版ステータスPublished - 2004 1 26
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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