UV-Raman spectroscopy study on SiO2/Si interface

M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, Akinobu Teramoto, Takeo Hattori, T. Ohmi

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

We evaluated oxidation-induced stresses in Si crystal and qualities of Si crystal near the SiO2/Si interfaces formed in dry O2 and O radicals using UV-Raman spectroscopy with a 364 nm excitation laser. The compressive stresses were observed in Si near the SiCVSi interfaces formed in dry O2 and O radicals. The stresses induced by the oxidation at 1050°C were higher than those at 900°C and 1000°C. It was also shown that the stress in Si crystal and the quality of Si crystal near the SiO 2/Si interface formed in dry O2 depended on the degree of oxygen dilution and the oxidation time. The SiO2/Si interface formed in O radicals exhibited larger compressive stress and better crystal quality as compared with that formed in dry O2.

本文言語English
ホスト出版物のタイトルSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
出版社Electrochemical Society Inc.
ページ55-66
ページ数12
2
ISBN(電子版)9781607680604
ISBN(印刷版)9781566777100
DOI
出版ステータスPublished - 2009
イベントInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
継続期間: 2009 5月 242009 5月 29

出版物シリーズ

名前ECS Transactions
番号2
19
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
国/地域United States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • 工学(全般)

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