Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

Fujio Ishihara, Hiroshi Uji, Tatsuya Kamimura, Satoru Matsumoto, Hirofumi Higuchi, Shigefusa Chichibu

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)4) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (Eopt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide Eopt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.

本文言語English
ページ(範囲)2229-2234
ページ数6
ジャーナルJapanese journal of applied physics
34
5R
DOI
出版ステータスPublished - 1995 5
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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