TY - JOUR
T1 - Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors
AU - Chichibu, Shigefusa
AU - Sugiyama, Mutsumi
AU - Ohbasami, Masahiro
AU - Hayakawa, Akinori
AU - Mizutani, Tsutomu
AU - Nakanishi, Hisayuki
AU - Negami, Takayuki
AU - Wada, Takahiro
PY - 2002/9/1
Y1 - 2002/9/1
N2 - Diethylselenide [(C2H5)2Se: DESe] was shown to be a promising less-hazardous alternative source for the preparation of CuInSe2 films for solar cell applications by the selenization of Cu-In and Cu-In-O precursors. Approximately 1.5 μm thick, single-phase, polycrystalline CuInSe2 films having grain size of approximately 1-2 μm were formed on Mo-coated soda-lime glass substrates at temperatures between 450° and 550°C. Slightly In-rich films exhibited a distinct contribution by excitonic absorption in the absorption spectra at 90 K. Photoluminescence spectra at low temperatures were dominated by characteristic bands at 0.97 and 0.90 eV, showing that the films are a suitable material for the photo-absorbing layer of CuInSe2-based solar cells.
AB - Diethylselenide [(C2H5)2Se: DESe] was shown to be a promising less-hazardous alternative source for the preparation of CuInSe2 films for solar cell applications by the selenization of Cu-In and Cu-In-O precursors. Approximately 1.5 μm thick, single-phase, polycrystalline CuInSe2 films having grain size of approximately 1-2 μm were formed on Mo-coated soda-lime glass substrates at temperatures between 450° and 550°C. Slightly In-rich films exhibited a distinct contribution by excitonic absorption in the absorption spectra at 90 K. Photoluminescence spectra at low temperatures were dominated by characteristic bands at 0.97 and 0.90 eV, showing that the films are a suitable material for the photo-absorbing layer of CuInSe2-based solar cells.
KW - A3. Physical vapor deposition processes
KW - A3. Polycrystalline deposition
KW - Al. Crystal structure
KW - B2. Semiconducting ternary compounds
KW - B3. Solar cells
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U2 - 10.1016/S0022-0248(02)01558-0
DO - 10.1016/S0022-0248(02)01558-0
M3 - Article
AN - SCOPUS:0036724770
VL - 243
SP - 404
EP - 409
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -