Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering

K. Yamaya, Y. Yamaki, H. Nakanishi, S. Chichibu

研究成果: Article査読

59 被引用数 (Scopus)

抄録

Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300°C showed a resistivity of 5×10-4cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films.

本文言語English
ページ(範囲)235-237
ページ数3
ジャーナルApplied Physics Letters
72
2
DOI
出版ステータスPublished - 1998 12月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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