Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection

K. Shiraishi, Y. Akasaka, S. Miyazaki, T. Nakayama, T. Nakaoka, G. Nakamura, K. Torii, H. Furutou, A. Ohta, P. Ahmet, K. Ohmori, H. Watanabe, T. Chikyow, M. L. Green, Y. Nara, K. Yamada

研究成果: Conference contribution

17 被引用数 (Scopus)

抄録

We have constructed a universal theory of workfunctions at metal/Hf-based dielectrics interfaces by combining an oxygen vacancy effects and a new concept of generalized charge neutrality level. Our theory systematically reproduces the experimentally observed workfunctions of various gate materials, including the unusual behaviors of workfunctions of both p-metals and metal silicides, and will become a useful guiding principle for the material selection of gate metals.

本文言語English
ホスト出版物のタイトルIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
出版社Institute of Electrical and Electronics Engineers Inc.
ページ39-42
ページ数4
ISBN(印刷版)078039268X, 9780780392687
DOI
出版ステータスPublished - 2005
イベントIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
継続期間: 2005 12 52005 12 7

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(印刷版)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント 「Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル