TY - JOUR
T1 - Unidirectionally Crystallized Stable n-Type Organic Thin-Film Transistors Based on Solution-Processable Donor–Acceptor Compounds
AU - Shibata, Yosei
AU - Tsutsumi, Jun'ya
AU - Matsuoka, Satoshi
AU - Minemawari, Hiromi
AU - Arai, Shunto
AU - Kumai, Reiji
AU - Hasegawa, Tatsuo
N1 - Funding Information:
This work was supported by an investment from Nippon Kayaku Co., Ltd. The synchrotron radiation experiments were performed under the approval of the Photon Factory Program Advisory Committee (Proposal No. 2014S2-001). This work was supported by JSPS KAKENHI Grant Nos. JP16H05976 and JP26246014.
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Thin-film formation by solution-shearing technique is examined for layered-crystalline donor–acceptor charge-transfer compounds composed of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene as a donor and optionally fluorinated derivatives of tetracyanoquinodimethane (n = 0, 2, 4) as acceptors. Polycrystalline thin films of the compounds whose crystalline size is over 2 mm along the blade-scan axis are successfully fabricated, and the formed films demonstrate anisotropic alignment of the crystalline grains where the crystal a-axis with the largest transfer integral is parallel to the blade-scan axis. Such anisotropic alignment of large crystalline grains affords air-stable n-type field-effect operation with a mobility as high as 0.61 cm2 V−1 s−1 which is comparable to that of the single-crystal devices.
AB - Thin-film formation by solution-shearing technique is examined for layered-crystalline donor–acceptor charge-transfer compounds composed of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene as a donor and optionally fluorinated derivatives of tetracyanoquinodimethane (n = 0, 2, 4) as acceptors. Polycrystalline thin films of the compounds whose crystalline size is over 2 mm along the blade-scan axis are successfully fabricated, and the formed films demonstrate anisotropic alignment of the crystalline grains where the crystal a-axis with the largest transfer integral is parallel to the blade-scan axis. Such anisotropic alignment of large crystalline grains affords air-stable n-type field-effect operation with a mobility as high as 0.61 cm2 V−1 s−1 which is comparable to that of the single-crystal devices.
KW - air-stable semiconductors
KW - charge-transfer complexes
KW - organic thin-film transistors
KW - printed electronics
KW - solution shearing
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U2 - 10.1002/aelm.201700097
DO - 10.1002/aelm.201700097
M3 - Article
AN - SCOPUS:85019076058
SN - 2199-160X
VL - 3
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 7
M1 - 1700097
ER -