Undoped silicon layers grown by gas source molecular beam epitaxy using Si₂H₆

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Epilayers 52%
• Silicon 36%
• Electron mobility 24%
• Substrates 21%
• Crystal growth 21%
• Crystallinity 18%
• Temperature 18%
• Crystalline materials 16%
• Impurities 14%

Physics & Astronomy

• molecular beam epitaxy 39%
• silicon 24%
• electron mobility 23%
• gases 23%
• crystal growth 21%
• crystallinity 20%
• conduction 15%
• impurities 15%
• temperature 13%
• room temperature 12%