Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

本文言語English
論文番号6594865
ページ(範囲)1298-1300
ページ数3
ジャーナルIEEE Electron Device Letters
34
10
DOI
出版ステータスPublished - 2013 9 17
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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